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參數(shù)資料
| 型號(hào)： | K4H510838E-TLA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70 |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁(yè)數(shù)： | 22/24頁(yè) |
| 文件大?。?/td> | 366K |
| 代理商： | K4H510838E-TLA0 |
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Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Table 8. Full Strength Driver Characteristics
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High
Minimum
Maximum
Typical
Low
Typical
High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
0.2
12.2
13.5
9.2
18.2
-12.2
-14.5
-9.2
-20.0
0.3
18.1
20.1
13.8
26.0
-18.1
-21.2
-13.8
-29.8
0.4
24.1
26.6
18.4
33.9
-24.0
-27.7
-18.4
-38.8
0.5
29.8
33.0
23.0
41.8
-29.8
-34.1
-23.0
-46.8
0.6
34.6
39.1
27.7
49.4
-34.3
-40.5
-27.7
-54.4
0.7
39.4
44.2
32.2
56.8
-38.1
-46.9
-32.2
-61.8
0.8
43.7
49.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
0.9
47.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
1.0
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
1.1
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510838E-TLA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD -40 to 125 |
| K4H510838E-TLB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD -40 to 125 |
| K4H510838M-TCA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 |
| K4H510838M-TCB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 |
| K4H510838M-TLA0 | 8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838E-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838E-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510838F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H510838F-LC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
| K4H510838F-LC/LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
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