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參數(shù)資料
| 型號(hào)： | K4H510838D-UC0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 366K |
| 代理商： | K4H510838D-UC0 |
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
6.0 Block Diagram (
16Mb x 8 / 8Mb x 16
I/O x4 Banks)
Bank Select
Timing Register
A
R
R
R
C
Data Input Register
Serial to parallel
8Mx16/ 4Mx32
8Mx16/ 4Mx32
8Mx16/ 4Mx32
S
2
O
I
Column Decoder
Latency & Burst Length
Programming Register
D
S
G
CK, CK
ADD
LCKE
CK, CK
CKE
CS
RAS
CAS
WE
CK, CK
LCAS
LRAS
LCBR
LWE
LWCBR
L
L
CK, CK
x8/16/32
x16/32
x8/16
x8/16
LWE
LDM (x8)
LUDM (x16)
x8/16
DQi
Data Strobe
LDM (x8)
LUDM (x16)
DM Input Register
LDM (x8)
LUDM (x16)
8Mx16/ 4Mx32
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| K4H511638D-UC0 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-UC2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H511638D-UC2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838A-TCA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 |
| K4H510838A-TCB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838D-UC2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-UC3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-UCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-ZCB3T00 | 制造商:Samsung Semiconductor 功能描述: |
| K4H510838E-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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