參數(shù)資料
型號： K4H510838D-LB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
中文描述： ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費（符合RoHS）
文件頁數(shù)： 10/24頁
文件大小： 366K
代理商： K4H510838D-LB0
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks Double Data Rate SDRAM
The K4H510838D / K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x
8,388,608 words by 8/16bits, fabricated with SAMSUNG
′
s high performance CMOS technology. Synchronous features with Data Strobe
allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating fre-
quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem-
ory system applications.
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
& V
DDQ
supply relative to V
SS
V
DD
, V
DDQ
-1.0 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.5
W
Short circuit current
I
OS
50
mA
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 70
°
C)
11.0 DC Operating Conditions
Note :
1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may
not exceed +/-2% of the dc value.
2. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track vari-
ations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V for DDR266/333)
V
DD
2.3
2.7
Supply voltage(for device with a nominal V
DD
of 2.6V for DDR400)
V
DD
2.5
2.7
I/O Supply voltage(for device with a nominal V
DD
of 2.5V for DDR266/333)
V
DDQ
2.3
2.7
V
I/O Supply voltage(for device with a nominal V
DD
of 2.5V for DDR400)
V
DDQ
2.5
2.7
I/O Reference voltage
V
REF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.36
V
DDQ
+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current(Normal strengh driver) ;V
OUT
= V
TT
+ 0.84V
I
OH
-16.8
mA
Output High Current(Normal strengh driver) ;V
OUT
= V
TT
- 0.84V
I
OL
16.8
mA
Output High Current(Half strengh driver) ;V
OUT
= V
TT
+ 0.45V
I
OH
-9
mA
Output High Current(Half strengh driver) ;V
OUT
= V
TT
- 0.45V
I
OL
9
mA
9.0 General Description
10.0 Absolute Maximum Rating
相關PDF資料
PDF描述
K4H511638D-UCC 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H510838C-UC 512Mb C-die DDR SDRAM Specification
K4H510838C-ZLCC DIN Audio Connector; No. of Contacts:7; Contact Termination:Solder; Mounting Type:Cable; Gender:Male RoHS Compliant: Yes
K4H510838C-ZLB3 Connector Kit; Contents Of Kit:C14610G0245008 24 position hood PG 21 double latch high profile side entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes
K4H510838C-ZCCC 512Mb C-die DDR SDRAM Specification
相關代理商/技術參數(shù)
參數(shù)描述
K4H510838D-LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H510838D-LCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H510838D-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510838D-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510838D-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*