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參數(shù)資料
| 型號(hào)： | K4H510838C-ZLB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Connector Kit; Contents Of Kit:C14610G0245008 24 position hood PG 21 double latch high profile side entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
| 中文描述： | 葷的512Mb芯片DDR SDRAM內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 23/24頁 |
| 文件大?。?/td> | 366K |
| 代理商： | K4H510838C-ZLB3 |
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
I
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
Vout(V)
Pullup Characteristics for Weak Output Driver
Pulldown Characteristics for Weak Output Driver
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| K4H510838C-ZCCC | 512Mb C-die DDR SDRAM Specification |
| K4H510838C-ZCB3 | 512Mb C-die DDR SDRAM Specification |
| K4H510838M-TCA0 | DIODE ZENER DUAL COMMON-CATHODE 300mW 6.2Vz 5mA-Izt 0.0645 0.1uA-Ir 2 SOT-23 3K/REEL |
| K4H510838C-UCA2 | 512Mb C-die DDR SDRAM Specification |
| K4H510838C-UCCC | 512Mb C-die DDR SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510838C-ZLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb C-die DDR SDRAM Specification |
| K4H510838D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| K4H510838D-LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H510838D-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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