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參數(shù)資料
| 型號(hào)： | K4H510438E-TCA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70 |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4H510438E-TCA2 |
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Parameter
Specification
DDR400
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
TBD
1.2 V
Maximum peak amplitude allowed for undershoot
TBD
TBD
1.2 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
2.4 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.4V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H510438E-TCB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70 |
| K4H510438E-TLA0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70 |
| K4H510438E-TLA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70 |
| K4H510438E-TLB0 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70 |
| K4H510438M-TCA2 | Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H510438E-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510438E-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510438E-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510438E-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H510438F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb F-die DDR SDRAM Specification |
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