參數(shù)資料
型號(hào): K4H510438E-TCA0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125
中文描述: 128MB DDR SDRAM的
文件頁(yè)數(shù): 2/24頁(yè)
文件大?。?/td> 367K
代理商: K4H510438E-TCA0
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Table of Contents
1.0 Key Features .............................................................................................................................. 4
2.0 Ordering Information ................................................................................................................ 4
3.0 Operating Frequencies............................................................................................................... 4
4.0 Pin Description .......................................................................................................................... 5
5.0 Package Physical Dimension ................................................................................................... 6
6.0 Block Diagram (64Mbit x4 / 32Mbit x8 I/O x4 Banks)............................................................... 7
7.0 Input/Output Function Description ........................................................................................... 8
8.0 Command Truth Table ............................................................................................................... 9
9.0 General Description...................................................................................................................10
10.0 Absolute Maximum Rating .....................................................................................................10
11.0 DC Operating Conditions........................................................................................................10
12.0 DDR SDRAM Spec Items & Test Conditions.........................................................................11
13.0 Input/Output Capacitance ......................................................................................................11
14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12
15.0 DDR SDRAM IDD spec table ..................................................................................................13
16.0 AC Operating Conditions .......................................................................................................14
17.0 AC Overshoot/Undershoot specification for Address and Control Pins ...........................14
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15
19.0 AC Timming Parameters & Specifications ...........................................................................16
20.0 System Characteristics for DDR SDRAM ............................................................................. 17
21.0 Component Notes................................................................................................................... 18
22.0 System Notes ..........................................................................................................................20
23.0 IBIS : I/V Characteristics for Input and Output Buffers........................................................21
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參數(shù)描述
K4H510438E-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438E-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438E-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438E-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438E-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM