參數資料
型號： K4H510438B-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
中文描述： 128MB DDR SDRAM的
文件頁數： 23/24頁
文件大?。?/td> 367K
代理商： K4H510438B-TCB0
Rev. 1.1 June. 2005
DDR SDRAM
DDR SDRAM 512Mb C-die (x4, x8, x16)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
1.0
2.0
I
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
Vout(V)
Pullup Characteristics for Weak Output Driver
Pulldown Characteristics for Weak Output Driver
相關PDF資料
PDF描述
K4H510438B-TLA0 Enclosures; For Use With:PC36/31-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; Features:Impact Resistant EN 50102; UV Resistant to UL 508; Approval Categories:Flammability Rated UL94-5V; Protection Rated IP65
K4H510438B-TLA2 128Mb DDR SDRAM
K4H510438B-TLB0 MOUNTING PLATE, STEEL, FOR TA201610; Length / Height, external:170mm; Material:Steel; Thickness, material:1.5mm; Width, external:140mm RoHS Compliant: Yes
K4H510438D 512Mb D-die DDR SDRAM Specification
K4H510838D 512Mb D-die DDR SDRAM Specification
相關代理商/技術參數
參數描述
K4H510438B-TCB3 制造商:Samsung Semiconductor 功能描述:DRAM Chip DDR SDRAM 512M-Bit 128Mx4 2.5V 66-Pin TSOP-II T/R
K4H510438B-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H510438B-UC/LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die DDR SDRAM Specification
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