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參數(shù)資料
| 型號(hào)： | K4H280838F-UCA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 128Mb的的F -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁(yè)數(shù)： | 35/53頁(yè) |
| 文件大?。?/td> | 669K |
| 代理商： | K4H280838F-UCA2 |
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- 35 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Current State
CS
RAS CAS
WE
Address
Command
Action
WRITE
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A
10
READ/READA
Terminate Burst With DM=High,
Latch CA, Begin Read, Deter-
mine Auto-Precharge*3
L
H
L
L
BA, CA, A
10
WRITE/WRITEA
Terminate Burst, Latch CA,
Begin new Write, Determine
Auto-Precharge*3
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A
10
PRE/PREA
Terminate Burst With DM=High,
Precharge
ILLEGAL
L
L
L
H
X
Refresh
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
READ with
AUTO
PRECHARGE
*6
(READA)
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A
10
READ/READA
*6
L
H
L
L
BA, CA, A
10
WRITE/WRITEA ILLEGAL
L
L
H
H
BA, RA
Active
*6
L
L
H
L
BA, A
10
PRE/PREA
*6
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
WRITE with
AUTO
RECHARGE
*7
(WRITEA)
L
H
H
L
X
Burst Stop
ILLEGAL
L
H
L
H
BA, CA, A
10
READ/READA
*7
L
H
L
L
BA, CA, A
10
WRITE/WRITEA *7
L
L
H
H
BA, RA
Active
*7
L
L
H
L
BA, A
10
PRE/PREA
*7
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
Table 9-2. Functional truth table
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H280838F-UCB0 | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-UCB3 | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-ULA2 | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-ULB0 | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-ULB3 | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H280838F-UCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-UCB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-ULA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-ULB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280838F-ULB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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