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參數資料
| 型號： | K4H280838C-TLA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數： | 18/53頁 |
| 文件大小： | 669K |
| 代理商： | K4H280838C-TLA2 |
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REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.2.3 Precharge
3.2.4 No Operation(NOP) & Device Deselect
The precharge command is used to precharge or close a bank that has been activated. The precharge com-
mand is issued when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank respectively or all banks simultaneously. The bank select
addresses(BA0, BA1) are used to define which bank is precharged when the command is initiated. For write
cycle, tWR(min.) must be satisfied until the precharge command can be issued. After tRP from the precharge,
an active command to the same bank can be initiated.
A10/AP
0
0
0
0
1
BA1
0
0
1
1
X
BA0
0
1
0
1
X
Precharge
Bank A Only
Bank B Only
Bank C Only
Bank D Only
All Banks
The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore
all the control inputs. The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS,
CAS and WE. For both Deselect and NOP the device should finish the current operation when this com-
mand is issued.
Bank Selection for Precharge by Bank address bits
Table 5. Bank selection for precharge by Bank address bits
相關PDF資料 |
PDF描述 |
|---|---|
| K4H280838C-TLB0 | 128Mb DDR SDRAM |
| K4H280838D-TCA0 | 128Mb DDR SDRAM |
| K4H280838D-TCA2 | RES CHIP 205 OHM 0603 1 |
| K4H280838D-TCB0 | 128Mb DDR SDRAM |
| K4H280838D-TLA0 | RES CHIP 205 OHM 0603 1 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4H280838C-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280838D-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280838D-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280838D-TCB0 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip DDR SDRAM 128M-Bit 16Mx8 2.5V 66-Pin TSOP-II Tray |
| K4H280838D-TCB3 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip DDR SDRAM 128M-Bit 16Mx8 2.5V 66-Pin TSOP-II Tray |
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