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參數(shù)資料
| 型號： | K4H280438F-ULA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 128Mb的的F -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費（符合RoHS） |
| 文件頁數(shù)： | 14/23頁 |
| 文件大小： | 298K |
| 代理商： | K4H280438F-ULA2 |
DDR SDRAM
DDR SDRAM 128Mb F-die (x4, x8)
Rev. 1.1 May. 2004
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR333
DDR266
Maximum peak amplitude allowed for overshoot
TBD
1.2 V
Maximum peak amplitude allowed for undershoot
TBD
1.2 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
2.4 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
相關PDF資料 |
PDF描述 |
|---|---|
| K4H280438F-ULB0 | 128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280438M-TCA2 | 128Mb DDR SDRAM |
| K4H280438M-TCB0 | 128Mb DDR SDRAM |
| K4H280438M-TLA0 | 128Mb DDR SDRAM |
| K4H280438A-TCA0 | DIODE ZENER SINGLE 500mW 4.7Vz 0.05mA-Izt 0.05 5uA-Ir 3 SOD-123 3K/REEL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4H280438F-ULB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H280438M-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280438M-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280438M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H280438M-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
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