參數(shù)資料
型號(hào): K4H280438A-TLA2
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mb DDR SDRAM
中文描述: 128MB DDR SDRAM的
文件頁(yè)數(shù): 13/23頁(yè)
文件大小: 298K
代理商: K4H280438A-TLA2
DDR SDRAM
DDR SDRAM 128Mb F-die (x4, x8)
Rev. 1.1 May. 2004
AC Operating Conditions
Parameter/Condition
Symbol
Min
Max-10
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
AC
Overshoot/Undershoot specification for Address and Control Pins
Parameter
Specification
DDR333
DDR266
Maximum peak amplitude allowed for overshoot
TBD
1.5 V
Maximum peak amplitude allowed for undershoot
TBD
1.5 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
4.5 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
4.5 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5
0.6875
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.3125
6.5
7.0
VDD
Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
undershoot
GND
V
Tims(ns)
AC overshoot/Undershoot Definition
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H280438A-TLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H280438B-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H280438B-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H280438B-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H280438B-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM