- 您現在的位置：買賣IC網 > PDF目錄374260 > K4H1G3238A-TLB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Mb DDR SDRAM PDF資料下載
參數資料
| 型號： | K4H1G3238A-TLB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數： | 28/53頁 |
| 文件大?。?/td> | 669K |
| 代理商： | K4H1G3238A-TLB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當前第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
- 28 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.10 DM masking
The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read
cycle. When the data mask is activated (DM high) during write operation, DDR SDRAM does not accept the
corresponding data.(DM to data-mask latency is zero).
DM must be issued at the rising or falling edge of data strobe.
Command
< Burst Length=8 >
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
Din 0
Din 1
Din 2
Din 3
t
DQSS
DM
Din 4
Din 5
Din 6
Din7
masked by DM=H
2
0
1
5
3
4
8
6
7
CK
CK
6. When terminating a burst Read command, the BST command must be issued L
BST
(“BST Latency”) clock
cycles before the clock edge at which the output buffers are tristated, where L
BST
equals the CAS latency
for read operations. This is shown in previous page Figure with examples for CAS latency (CL) of 1.5, 2,
2.5, 3 and 3.5 (only selected CAS latencies are required by the DDR SDRAM standards, the others are
optional).
7. When the burst terminates, the DQ and DQS pins are tristated.
The BST command is not byte controllable and applies to all bits in the DQ data word and the(all) DQS pin(s).
Figure 18. DM masking timing
相關PDF資料 |
PDF描述 |
|---|---|
| K4H1G3238B-TCA0 | 128Mb DDR SDRAM |
| K4H1G3238B-TCA2 | 128Mb DDR SDRAM |
| K4H1G3238B-TCB0 | 128Mb DDR SDRAM |
| K4H1G3238B-TLA0 | 128Mb DDR SDRAM |
| K4H1G3238B-TLA2 | 128Mb DDR SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K4H1G3238B-TCA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G3238B-TCA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G3238B-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G3238B-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G3238B-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。