參數(shù)資料
型號: K4H1G0838M-LB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
中文描述: 1Gb的的M -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費(fèi)(符合RoHS)
文件頁數(shù): 51/53頁
文件大?。?/td> 669K
代理商: K4H1G0838M-LB0
- 51 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
12. QFC function
when drive low on reads coincident with the start of DQS, this DRAM output signal says that one cycle later
there will be the first valid DQS output and returned to HI-Z after this finishing a burst operation. It is also
driven low shortly after a write command is received and returned to HI-Z shortly after the last data strobe
transition is received. Whenever the device is in standby, the signal is HI-Z. DQS is intended to enable an
external data switch. QFC can be enabled or disabled through EMRS control
.
QFC timing on Read operation
QFC on reads is enabled coincident with the start of DQS preamble, and disabled coincident with the end of
DQS postamble
Command
2
0
1
5
3
4
8
6
7
Read
Dout 0 Dout 1
Hi-Z
DQS
DQ’S
QFC
t
QCS
t
QCH
CL = 2, BL = 2
CK
CK
QFC definition
相關(guān)PDF資料
PDF描述
K4H1G0438M-LB3 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0838M-LB3 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-TCA2 128Mb DDR SDRAM
K4H1G0438M-TCB0 128Mb DDR SDRAM
K4H1G0438M-TLA0 128Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H1G0838M-LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0838M-TC/LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification
K4H1G0838M-TC/LB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification
K4H1G0838M-TC/LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification
K4H1G0838M-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM