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參數(shù)資料
| 型號： | K4H1G0838E-TLA0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1 K,RESISTOR SMT,0603,+/- 1% |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 3/53頁 |
| 文件大?。?/td> | 669K |
| 代理商： | K4H1G0838E-TLA0 |
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- 3 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History(continued)
Version 0.7 (March, 2000)
- Changed 128Mb spec from target to Preliminary version.
- Changed partnames as follows.
- Changed input cap. spec.
- Changed operating condition.
- Added Overshoot/Undershoot spec
. Vih(max) = 4.2V, the overshoot voltage duration is
≤
3ns at VDD.
. Vil(min) =- 1.5V, the overshoot voltage duration is
≤
3ns at VSS.
- Changed AC parameters as follows.
- Added DC spec values.
Version 0.71 (April, 2000)
- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.
- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.
Version 0.72(May,2000)
-
Changed DC spec item & test condition
Version 0.73(June,2000)
-
Added updated DC spec values
-
Deleted tDAL in AC parameter
Version 1.0(November,2000)
-
Eliminate "preliminary"
from
to
KM44L32031BT-G(L)Z/Y/0
K4H280438B-TC(L)A2/B0/A0
KM48L16031BT-G(L)Z/Y/0
K4H280838B-TC(L)A2/B0/A0
KM416L8031BT-G(L)Z/Y/0
K4H281638B-TC(L)A2/B0/A0
from
to
CK/CK
2.5pF ~ 3.5pF
2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF
DQ/DQS/DM
4.0pF ~ 5.5pF
4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF
CMD/Addr
2.5pF ~ 3.5pF
2.0pF ~ 3.0pF with Delta Cin = 0.5pF
from
to
Vil/Vih(ac)
Vref +/- 0.35V
Vref +/- 0.31V
V
IL
/V
IH
(dc)
Vref +/- 0.18V
Vref +/- 0.15V
from
to
Comments
tDQSQ
+/- 0.5(PC266), +/- 0.6(PC200)
+0.5(PC266), +0.6(PC200)
tDV
+/- 0.35tCK
-
Removed
tQH
-
tHPmin - 0.75ns(PC266)
New Definition
tHPmin - 1.0ns(PC200)
tHP
-
tCLmin or tCHmin
New Definition
相關(guān)PDF資料 |
PDF描述 |
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| K4H1G0838E-TLA2 | 128Mb DDR SDRAM |
| K4H1G0838E-TLB0 | 128Mb DDR SDRAM |
| K4H1G0838M-TCA2 | 128Mb DDR SDRAM |
| K4H1G0838M-TCB0 | 128Mb DDR SDRAM |
| K4H1G0838M-TLA0 | 128Mb DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H1G0838E-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G0838E-TLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H1G0838M-LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0838M-LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0838M-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
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