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型號(hào)：	K4H1G0438M-UC2
廠商：	SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述：	0603 18 OHM 1/16W
中文描述：	1Gb的的M -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費(fèi)（符合RoHS）
文件頁(yè)數(shù)：	18/53頁(yè)
文件大小：	669K
代理商：	K4H1G0438M-UC2

- 18 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

3.2.3 Precharge

3.2.4 No Operation(NOP) & Device Deselect

The precharge command is used to precharge or close a bank that has been activated. The precharge com-

mand is issued when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The precharge

command can be used to precharge each bank respectively or all banks simultaneously. The bank select

addresses(BA0, BA1) are used to define which bank is precharged when the command is initiated. For write

cycle, tWR(min.) must be satisfied until the precharge command can be issued. After tRP from the precharge,

an active command to the same bank can be initiated.

A10/AP

BA1

BA0

Precharge

Bank A Only

Bank B Only

Bank C Only

Bank D Only

All Banks

The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore

all the control inputs. The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS,

CAS and WE. For both Deselect and NOP the device should finish the current operation when this com-

mand is issued.

Bank Selection for Precharge by Bank address bits

Table 5. Bank selection for precharge by Bank address bits

相關(guān)PDF資料	PDF描述
K4H1G0438M-UC3	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-UCA2	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-UCB0	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-UCB3	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-ULA2	1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
K4H1G0438M-UC3	制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-UCA2	制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-UCB0	制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-UCB3	制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-ULA2	制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

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