- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374264 > K4H1G0438M-TLB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Mb DDR SDRAM PDF資料下載
參數(shù)資料
| 型號： | K4H1G0438M-TLB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mb DDR SDRAM |
| 中文描述： | 128MB DDR SDRAM的 |
| 文件頁數(shù)： | 32/53頁 |
| 文件大?。?/td> | 669K |
| 代理商： | K4H1G0438M-TLB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁當前第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
- 32 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.14 Power down
CKE
Precharge
Active
Active
power
down
Exit
Read
Active
power
down
Entry
power
down
Entry
Precharge
Command
～
～
～
～
～
～
CK
CK
The power down mode is entered when CKE is low and exited when CKE is high. Once the power down
mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit tree are gated off to reduce
power consumption. All banks should be in idle state prior to entering the precharge power down mode and
CKE should be set high at least 1tck+tIS prior to row active command . During power down mode, refresh
operations cannot be performed, therefore the device cannot be remained in power down mode longer than
the refresh period(Data retension time) of the device.
Figure 23. Power down entry and exit timing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H1G0438M-UC | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-UC0 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-UC2 | 0603 18 OHM 1/16W |
| K4H1G0438M-UC3 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-UCA2 | 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H1G0438M-UC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-UC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-UC/LB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-UC/LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
| K4H1G0438M-UC0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。