參數(shù)資料
型號(hào)： K4H1G0438M-LA2
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
中文描述： 1Gb的的M -模與鉛DDR SDRAM的規(guī)格66 TSOP-II免費(fèi)（符合RoHS）
文件頁(yè)數(shù)： 20/53頁(yè)
文件大?。?/td> 669K
代理商： K4H1G0438M-LA2
- 20 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.1 Burst Read Operation
Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the Burst read
command is issued by asserting CS and CAS low while holding RAS and WE high at the rising edge of the
clock(CK) after tRCD from the bank activation. The address inputs (A0~A9) determine the starting address for
the Burst. The Mode Register sets type of burst(Sequential or interleave) and burst length(2, 4, 8). The first
output data is available after the CAS Latency from the READ command, and the consecutive data are pre-
sented on the falling and rising edge of Data Strobe(DQS) adopted by DDR SDRAM until the burst length is
completed.
Command
< Burst Length=4, CAS Latency= 2, 2.5 >
READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′
s
CAS Latency=2
Dout 0 Dout 1 Dout 2 Dout 3
DQS
DQ
′
s
CAS Latency=2.5
Dout 0 Dout 1 Dout 2 Dout 3
2
0
1
5
3
4
8
6
7
t
RPRE
t
RPST
CK
CK
3.3 Essential Functionality for DDR SDRAM
The essential functionality that is required for the DDR SDRAM device is described in this chapter
Figure 9. Burst read operation timing
相關(guān)PDF資料
PDF描述
K4H1G0838M-LA2 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-LB0 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0838M-LB0 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-LB3 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0838M-LB3 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H1G0438M-LB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
K4H1G0438M-TC/LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification
K4H1G0438M-TC/LB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification
K4H1G0438M-TC/LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb M-die DDR SDRAM Specification
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*