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參數(shù)資料
| 型號： | K4E640411D-TC500 |
| 元件分類： | DRAM |
| 英文描述： | 16M X 4 EDO DRAM, 50 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-32 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 407K |
| 代理商： | K4E640411D-TC500 |
CMOS DRAM
K4E660411D, K4E640411D
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -50, or -60), package type (SOJ or TSOP-
II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
This 16Mx4 EDO Mode DRAM family is fabricated using Samsung
′s advanced CMOS process to realize high band-width, low power
consumption and high reliability.
Extended Data Out Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+5.0V
±10% power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A10
(A0~A11)*1
Memory Array
16,777,216 x 4
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Performance Range
Speed
tRAC
tCAC
tRC
tPC
-50
50ns
13ns
84ns
20ns
-60
60ns
15ns
104ns
25ns
Active Power Dissipation
Speed
8K
4K
-50
495
660
-60
440
605
Unit : mW
S
e
n
s
e
A
m
p
s
&
I/
O
DQ0
to
DQ3
Data out
Buffer
Data in
Buffer
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
OE
Part Identification
- K4E660411D-JC(5.0V, 8K Ref., SOJ)
- K4E640411D-JC(5.0V, 4K Ref., SOJ)
- K4E660411D-TC(5.0V, 8K Ref., TSOP)
- K4E640411D-TC(5.0V, 4K Ref., TSOP)
FEATURES
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
K4E660411D*
8K
64ms
K4E640411D
4K
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F640411C-TC500 | 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32 |
| K4F640412C-JC450 | 16M X 4 FAST PAGE DRAM, 45 ns, PDSO32 |
| K4T1G044QC-ZCLE6 | 256M X 4 DDR DRAM, 0.45 ns, PBGA60 |
| K4T56163QI-ZLD50 | 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E640411D-TC60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412C-TL50 | 制造商:Samsung Semiconductor 功能描述:CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| K4E640412C-TL60 | 制造商:Samsung Semiconductor 功能描述:CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| K4E640412D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412D-TC50 | 制造商:Samsung Semiconductor 功能描述:DRAM Chip EDO 64M-Bit 16Mx4 3.3V 32-Pin TSOP-II |
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