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參數(shù)資料
| 型號(hào)： | K4D26323QG-GC2A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit GDDR SDRAM |
| 中文描述： | 128Mbit GDDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 17/18頁 |
| 文件大?。?/td> | 315K |
| 代理商： | K4D26323QG-GC2A |
128M GDDR SDRAM
K4D26323QG-GC
- 17 -
Rev 1.2(Mar. 2005)
0
1
2
3
4
5
6
7
8
BAa
Ra
Ra
Ra
tRCD
ACTIVEA
ACTIVEB WRITEA
WRITEB
13
14
15
16
17
18
19
20
21
BAa
BAb
Ca
Cb
BAa
Ca
9
10
11
12
PRECH
BAa
22
Normal Write Burst
(@ BL=4)
Multi Bank Interleaving Write Burst
(@ BL=4)
BAa
Ra
Ra
BAb
Rb
Rb
tRAS
tRC
tRP
tRRD
COMMAND
DQS
DQ
WE
DM
CK, CK
A8/AP
ADDR
(A0~A7,
BA[1:0]
ACTIVEA
WRITEA
Da0 Da1 Da2 Da3
Simplified Timing(2) @ BL=4
Db0 Db1
Db3
Da0 Da1 Da2 Da3
Db2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D26323QG-GC33 | 128Mbit GDDR SDRAM |
| K4D26323RA-GC | 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC2A | 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC33 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC36 | 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D26323QG-GC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM |
| K4D26323RA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
| K4D26323RA-GC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL |
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