參數(shù)資料
型號(hào): K4D263238G-GC2A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit GDDR SDRAM
中文描述: 128Mbit GDDR SDRAM內(nèi)存
文件頁(yè)數(shù): 4/20頁(yè)
文件大?。?/td> 430K
代理商: K4D263238G-GC2A
128M GDDR SDRAM
K4D263238G-GC
- 4 -
Rev 1.8 (March. 2005)
The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by
32 bits, fabricated with SAMSUNG
s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 2.8GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety
of high performance memory system applications.
2.5V ± 5% power supply for device operation
2.5V ± 5% power supply for I/O interface
SSTL_2 compatible inputs/outputs
4 banks operation
MRS cycle with address key programs
-. Read latency 3, 4 (clock)
-. Burst length (2, 4 and 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive
going edge of the system clock
Differential clock input
GENERAL DESCRIPTION
FEATURES
No Wrtie-Interrupted by Read Function
4 DQS’s ( 1DQS / Byte )
Data I/O transactions on both edges of Data strobe
DLL aligns DQ and DQS transitions with Clock transition
Edge aligned data & data strobe output
Center aligned data & data strobe input
DM for write masking only
Auto & Self refresh
32ms refresh period (4K cycle)
144-Ball FBGA
Maximum clock frequency up to 350MHz
Maximum data rate up to 700Mbps/pin
FOR 1M x 32Bit x 4 Bank DDR SDRAM
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
ORDERING INFORMATION
K4D263238G-VC is the Lead Free package part number.
Part NO.
Max Freq.
Max Data Rate
Interface
Package
K4D263238G-GC2A
350MHz
700Mbps/pin
SSTL_2
144-Ball FBGA
K4D263238G-GC33
300MHz
600Mbps/pin
K4D263238G-GC36
275MHz
550Mbps/pin
相關(guān)PDF資料
PDF描述
K4D263238G-GC33 128Mbit GDDR SDRAM
K4D263238G-GC36 128Mbit GDDR SDRAM
K4D263238G-VC 128Mbit GDDR SDRAM
K4D263238M-QC60 DIODE ZENER DUAL COMMON-CATHODE 300mW 3.3Vz 5mA-Izt 0.0606 0.1uA-Ir SOT-23 3K/REEL
K4D263238M 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238G-GC33 制造商:Samsung Semiconductor 功能描述:
K4D263238G-GC36 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM
K4D263238G-VC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM
K4D263238I-GC50T00 制造商:Samsung 功能描述:DDR SGRAM X32 FBGA - Tape and Reel
K4D263238I-UC50 制造商:Samsung Semiconductor 功能描述: