參數(shù)資料
型號(hào)： K4D263238E-GC2A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
中文描述： 100萬(wàn)x 32Bit的× 4銀行圖形雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁(yè)數(shù)： 15/17頁(yè)
文件大?。?/td> 310K
代理商： K4D263238E-GC2A
128M GDDR SDRAM
K4D263238E-GC
- 15 -
Rev 1.7 (Nov. 2003)
(Unit : Number of Clock)
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-25
-2A
-33
-36
-40
-45
Unit
Note
Min
17
Max
-
Min
15
Max
-
Min
13
Max
-
Min
13
Max
-
Min
13
Max
-
Min
12
Max
-
Row cycle time
t
RC
t
RFC
t
RAS
t
RCDRD
t
RCDWR
t
RP
t
RRD
t
WR
tCK
Refresh row cycle time
19
-
17
-
15
-
15
-
15
-
14
-
tCK
Row active time
12
100K
10
100K
9
100K
9
100K
9
100K
8
100K
tCK
RAS to CAS delay for Read
6
-
5
-
4
-
4
-
4
-
4
-
tCK
RAS to CAS delay for Write
4
-
3
-
2
-
2
-
2
-
2
-
tCK
Row precharge time
5
-
5
-
4
-
4
-
4
-
4
-
tCK
Row active to Row active
Last data in to Row precharge @Nor-
mal Precharge
Last data in to Row precharge @Auto
Precharge
Last data in to Read command
4
-
4
-
3
-
3
-
3
-
3
-
tCK
3
-
3
-
3
-
3
-
3
-
3
-
tCK
1
t
WR_A
t
CDLR
t
CCD
t
MRD
t
DAL
t
XSR
t
PDEX
t
REF
3
-
3
-
3
-
3
-
3
-
3
-
tCK
1
2
-
2
-
2
-
2
-
2
-
2
-
tCK
1
Col. address to Col. address
1
-
1
-
1
-
1
-
1
-
1
-
tCK
Mode register set cycle time
Auto precharge write recovery + Pre-
charge
Exit self refresh to read command
2
-
2
-
2
-
2
-
2
-
2
-
tCK
8
-
8
-
7
-
7
-
7
-
7
-
tCK
200
3tCK+
tIS
7.8
-
200
3tCK+
tIS
7.8
-
200
3tCK+
tIS
7.8
-
200
3tCK+
tIS
7.8
-
200
3tCK+
tIS
7.8
-
200
3tCK+
tIS
7.8
-
tCK
Power down exit time
-
-
-
-
-
-
ns
Refresh interval time
-
-
-
-
-
-
us
AC CHARACTERISTICS (II)
K4D263238E-GC25
Frequency
400MHz ( 2.5ns )
Cas Latency
5
tRC
17
tRFC
19
tRAS
12
tRCDRD
6
tRCDWR
4
tRP
5
tRRD
4
tDAL
8
Unit
tCK
K4D263238E-GC2A
Frequency
350MHz ( 2.86ns )
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
222MHz ( 4.5ns )
Cas Latency
4
4
4
4
3
tRC
15
13
13
13
12
tRFC
17
15
15
15
14
tRAS
10
9
9
9
8
tRCDRD
5
4
4
4
4
tRCDWR
3
2
2
2
2
tRP
5
4
4
4
4
tRRD
4
3
3
3
3
tDAL
8
7
7
7
7
Unit
tCK
tCK
tCK
tCK
tCK
K4D263238E-GC33
Frequency
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
222MHz ( 4.5ns )
Cas Latency
4
4
4
3
tRC
13
13
13
12
tRFC
15
15
15
14
tRAS
9
9
9
8
tRCDRD
4
4
4
4
tRCDWR
2
2
2
2
tRP
4
4
4
4
tRRD
3
3
3
3
tDAL
7
7
7
7
Unit
tCK
tCK
tCK
tCK
相關(guān)PDF資料
PDF描述
K4D263238E-GC33 DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC36 DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL
K4D263238E-GC40 DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL
K4D263238E-GC45 DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL
K4D263238G-GC 128Mbit GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238E-GC33 制造商:SAMSG 功能描述:
K4D263238E-GC36 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC40 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
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