參數(shù)資料
型號: K4D263238D-QC50
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
中文描述: 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL
文件頁數(shù): 2/18頁
文件大?。?/td> 239K
代理商: K4D263238D-QC50
128M DDR SDRAM
K4D263238D
Revision History
Revision 1.3 (July 18, 2002)
Changed power dissipation from 2.0W to 1.8W
- 2 -
Rev. 1.3 (Jul. 2002)
Revision 1.2 (June 17, 2002)
Removed K4D263238D-QC55 from the spec.
183/166MHz were supported in K4D263238D-QC50.
Revision 1.1 (May 24, 2002)
Removed K4D263238D-QC45/60 from the spec
Revision 1.0 (May 20, 2002)
Define DC spec.
Revision 0.0 (April 23, 2002)-
Target spec
Define target spec.
相關(guān)PDF資料
PDF描述
K4D263238E Aluminum Electrolytic Radial Lead Hi Temp 150 Deg Capacitor; Capacitance: 100uF; Voltage: 100V; Case Size: 12.5x25 mm; Packaging: Bulk
K4D263238E-GC25 DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC2A DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
K4D263238E-GC33 DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL
K4D263238E-GC36 DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4D263238E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC2A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
K4D263238E-GC33 制造商:SAMSG 功能描述:
K4D263238E-GC36 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL