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參數(shù)資料
| 型號： | K4D263238A-GC40 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL |
| 中文描述： | 100萬x 32Bit的× 4銀行雙數(shù)據(jù)速率同步DRAM的雙向數(shù)據(jù)選通和DLL |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 298K |
| 代理商： | K4D263238A-GC40 |
128M DDR SDRAM
K4D263238A-GC
- 11 -
Rev. 2.0 (Jan. 2003)
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, T
A
=0 to 65
°
C)
Note :
1. Measured with outputs open.
2. Refresh period is 32ms.
Parameter
Symbol
Test Condition
Version
Unit
Note
-33
-36
-40
-45
-50
Operating Current
(One Bank Active)
I
CC1
Burst Lenth=2
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
430
410
380
370
350
mA
1
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
75
70
65
65
65
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
120
115
110
100
100
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
120
110
100
100
100
mA
Active Standby Current in
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
310
280
240
230
230
mA
Operating Current
( Burst Mode)
I
CC4
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
740
690
640
610
570
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
(min)
300
290
280
270
260
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
4
mA
Operating Current
(4Bank interleaving)
I
CC7
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
960
900
830
750
690
mA
1. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same
Note :
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
=0V, V
DD
=2.5V+
5%, V
DDQ
=2.5V+
5%,T
A
=0 to 65
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage; DQ
V
IH
V
REF
+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
V
IL
-
-
V
REF
-0.35
V
Clock Input Differential Voltage; CK and CK
V
ID
0.7
-
V
DDQ
+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
V
IX
0.5*V
DDQ
-0.2
-
0.5*V
DDQ
+0.2
V
2
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| K4D263238A-GC45 | DIODE ZENER SINGLE 500mW 3.6Vz 0.05mA-Izt 0.05 7.5uA-Ir 2 SOD-123 3K/REEL |
| K4D263238A-GC50 | DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL |
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相關代理商/技術(shù)參數(shù) |
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|---|---|
| K4D263238A-GC45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238A-GC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
| K4D263238D-QC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
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