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參數(shù)資料
| 型號： | K4D261638E-TC36 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| 中文描述： | 200萬× 16 × 4，銀行雙數(shù)據(jù)速率同步DRAM |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 215K |
| 代理商： | K4D261638E-TC36 |
128M DDR SDRAM
K4D261638E
- 14 -
Rev. 1.2 (Jul. 2003)
AC CHARACTERISTICS (II)
K4D261638E-TC2A
Frequency
350MHz ( 2.86ns )
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
4
4
4
3
3
tRC
15
15
15
13
12
tRFC
17
17
17
15
14
tRAS
10
10
10
9
8
tRCDRD
4
4
4
4
4
tRCDWR
2
2
2
2
2
tRP
5
5
5
4
4
tRRD
3
3
3
3
3
tDAL
8
8
8
7
7
Unit
tCK
tCK
tCK
tCK
tCK
(Unit : Number of Clock)
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Parameter
Symbol
-2A
-33
-36
-40
-50
Unit Note
Min
15
17
10
4
2
5
3
Max
-
-
100K
-
-
-
-
Min
15
17
10
4
2
5
3
Max
-
-
100K
-
-
-
-
Min
15
17
10
4
2
5
3
Max
-
-
100K
-
-
-
-
Min
13
15
9
4
2
4
3
Max
-
-
100K
-
-
-
-
Min
12
14
8
4
2
4
3
Max
-
-
100K
-
-
-
-
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery +
Precharge
Exit self refresh to read command tXSR
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tWR
3
-
3
-
3
-
3
-
3
-
tCK
1
tWR_A
3
-
3
-
3
-
3
-
3
-
tCK
1
tCDLR
tCCD
tMRD
3
1
2
-
-
-
3
1
2
-
-
-
2
1
2
-
-
-
2
1
2
-
-
-
2
1
2
-
-
-
tCK
tCK
tCK
1
tDAL
8
-
8
-
8
-
7
-
7
-
tCK
200
3tCK
+tIS
7.8
-
200
3tCK
+tIS
7.8
-
200
3tCK
+tIS
7.8
-
200
3tCK
+tIS
7.8
-
200
3tCK
+tIS
7.8
-
tCK
Power down exit time
tPDEX
-
-
-
-
-
ns
Refresh interval time
tREF
-
-
-
-
-
us
K4D261638E-TC33
Frequency
300MHz ( 3.3ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
Cas Latency
4
4
3
3
tRC
15
15
13
12
tRFC
17
17
15
14
tRAS
10
10
9
8
tRCDRD
4
4
4
4
tRCDWR
2
2
2
2
tRP
5
5
4
4
tRRD
3
3
3
3
tDAL
8
8
7
7
Unit
tCK
tCK
tCK
tCK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4D261638E-TC40 | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638E-TC50 | 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638 | 128Mbit GDDR SDRAM |
| K4D261638F | 128Mbit GDDR SDRAM |
| K4D261638F-TC25 | 128Mbit GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D261638E-TC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638E-TC50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
| K4D261638F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM |
| K4D261638F-LC40000 | 制造商:Samsung 功能描述:DDR SGRAM X16 TSOP2 - Trays |
| K4D261638F-TC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR SDRAM |
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