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參數(shù)資料
| 型號： | K4B1G1646C-ZCG9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb C-die DDR3 SDRAM Specification |
| 中文描述： | 1Gb的?芯片的DDR3 SDRAM規(guī)范 |
| 文件頁數(shù)： | 25/63頁 |
| 文件大?。?/td> | 1255K |
| 代理商： | K4B1G1646C-ZCG9 |
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Page 25 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
If temperature and/or voltage change after calibration, the tolerance limits widen according to table below
T = T - T(@calibration);
V = VDDQ - VDDQ (@calibration); VDD = VDDQ
*dR
ON
dT and dR
ON
dV are not subject to production test but are verified by design and characterization
[ Table 23 ] Output Driver Sensitivity Definition
[ Table 24 ] Output Driver Voltage and Temperature Sensitivity
Min
Max
Units
RONPU@V
OHDC
0.6 - dR
ON
dTH * |
T| - dR
ON
dVH * |
V|
1.1 + dR
ON
dTH * |
T| + dR
ON
dVH * |
V|
RZQ/7
RON@V
OMDC
0.9 - dR
ON
dTM * |
T| - dR
ON
dVM * |
V|
1.1 + dR
ON
dTM * |
T| + dR
ON
dVM * |
V|
RZQ/7
RONPD@
VOLDC
0.6 - dR
ON
dTL * |
T| - dR
ON
dVL * |
V|
1.1 + dR
ON
dTL * |
T| + dR
ON
dVL * |
V|
RZQ/7
Min
Max
Units
dR
ON
dTM
0
1.5
%/
°
C
dR
ON
dVM
0
0.15
%/mV
dR
ON
dTL
0
1.5
%/
°
C
dR
ON
dVL
0
TBD
%/mV
dR
ON
dTH
0
1.5
%/
°
C
dR
ON
dVH
0
TBD
%/mV
9.7.1 Output Drive Temperature and Voltage sensitivity
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of MR1 register.
ODT is applied to the DQ,DQ, DQS/DQS and TDQS,TDQS (x8 devices only) pins.
A functional representation of the on-die termination is shown below. The individual pull-up and pull-down resistors (
RTTpu and RTTpd
)
are defined as follows :
On-Die Termination : Definition of Voltages and Currents
RTTpu =
VDDQ-Vout
l Iout l
under the condition that RTTpd is turned off
RTTpd =
Vout
l Iout l
under the condition that RTTpu is turned off
VDDQ
DQ
VSSQ
RTT
Pu
Ipd
RTT
Pd
To
other
circuitry
like
RCV,
...
Output Driver
Ipu
Iout
Vout
Iout=Ipd-Ipu
9.8 On-Die Termination (ODT) Levels and I-V Characteristics
Figure 13. On-Die Termination : Definitionof Voltages and Currents
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