參數(shù)資料
型號(hào)： K4B1G0446C-CF8
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb C-die DDR3 SDRAM Specification
中文描述： 1Gb的?芯片的DDR3 SDRAM規(guī)范
文件頁(yè)數(shù)： 21/63頁(yè)
文件大小： 1255K
代理商： K4B1G0446C-CF8
Page 21 of 63
Rev. 1.0 June 2007
1Gb DDR3 SDRAM
K4B1G04(08/16)46C
V
DDQ
V
OH(AC)
V
REF
V
OL(AC)
V
SSQ
delta TRS
delta TFS
9.4 Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOLdiff(AC) and
VOHdiff(AC) for differential signals as shown inTable 18 and figure 8.
[ Table 18 ] Differential Output slew rate definition
[ Table 19 ] Differential Output slew rate
Note : Output slew rate is verified by design and characterization, and may not be subject to production test.
For Ron=RZQ/7 setting
Description
Measured
Defined by
From
To
Differential output slew rate for rising edge
VOLdiff(AC)
VOHdiff(AC)
VOHdiff(AC)-VOLdiff(AC)
Delta TRdiff
Differential output slew rate for falling edge
VOHdiff(AC)
VOLdiff(AC)
VOHdiff(AC)-VOLdiff(AC)
Delta TFdiff
Parameter
Symbol
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Units
Min
Max
Min
Max
Min
Max
Min
Max
Single ended output slew rate
SRQse
5
10
5
10
5
10
TBD
10
V/ns
V
DDQ
V
OHdiff(AC)
V
REF
V
OLdiff(AC)
V
SSQ
delta TRdiff
delta TFdiff
Figure 7. Single Ended Output Slew Rate definition
Figure 8. Differential Output Slew Rate definition
9.3.Single Ended Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC)
for single ended signals as shown in Table 16 and figure 7.
[ Table 16 ] Single Ended Output slew rate definition
[ Table 17 ] Single Ended Output slew rate
Note : Output slew rate is verified by design and characterization, and may not be subject to production test.
For Ron=RZQ/7 setting
Description
Measured
Defined by
From
To
Single ended output slew rate for rising edge
VOL(AC)
VOH(AC)
VOH(AC)-VOL(AC)
Delta TRse
Single ended output slew rate for falling edge
VOH(AC)
VOL(AC)
VOH(AC)-VOL(AC)
Delta TFse
Parameter
Symbol
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Units
Min
Max
Min
Max
Min
Max
Min
Max
Single ended output slew rate
SRQse
2.5
5
2.5
5
2.5
5
TBD
5
V/ns
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K4B1G0446C-ZCF7 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification
K4B1G0446C-ZCG9 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb C-die DDR3 SDRAM Specification
K4B1G0446D 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
K4B1G0446D-HCF7 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
K4B1G0446D-HCF8 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb D-die DDR3 SDRAM Specification
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