參數(shù)資料
型號： K3S7V2000M-TC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
中文描述： 6400位（4Mx16 / 2Mx32）同步MASKROM
文件頁數(shù)： 4/27頁
文件大小： 1080K
代理商： K3S7V2000M-TC
K3S7V2000M-TC
Synch. MROM
ABSOLUTE MAXIMUM RATINGS
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Parameter
Symbol
Min
Max
Unit
Voltage on V
DD
Relative to Vss
V
DD
, V
DD
Q
-0.5
4.6
V
Voltage on Any Pin Relative to Vss
V
IN
, V
OUT
-0.5
V
DD
+ 0.5
≤
4.6
V
Operating Temperature
T
A
0
70
°
C
°
C
Storage Temperature
T
STG
-55
125
Short circuit current
I
OS
-
50
mA
Power Dissipation
P
D
-
1
W
DC OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to V
SS
, T
A
=0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
DD
, V
DD
Q
3.0
3.3
3.6
V
Supply Voltage(Ground)
V
SS,
V
SS
Q
0
0
0
V
DC CHARACTERISTICS
Note : 1. V
IH
(Max)=4.6V for pulse width
≤
10ns acceptable, pulse width measured at 50% of pulse amplitude.
2. V
IL
(Min)=-1.5V for pulse width
≤
10ns acceptable, pulse width measured at 50% of pulse amplitude.
3. The condition is the same as Self Refresh Mode of SDRAM, that is, in this case CS,RAS,CAS have to be set to Low, MR has to be set to High.
Parameter
Symbol
Min
Max
Unit
Test Condition
Standby Current ( Note3)
I
CC3P
-
150
uA
CKE
≤
V
IL
(Max), t
CC
=Min
I
CC3PS
-
150
uA
CKE=0, t
CC
=Min
Active Standby Current
I
CC3N
-
50
mA
CS
≥
V
IH
(Min), t
CC
=Min,
All Outputs Open
Burst Mode Operating Current
I
CC4
-
100
mA
t
CC
=Min, All Outputs Open
Input Leakage Current
I
IL
-10
10
uA
0V
≤
V
IN
≤
V
DD
+ 0.3V
Pins not under test=0V
Output Leakage Current (Dout Disabled)
I
OL
-10
10
uA
(0V
≤
V
OUT
≤
V
DD
Max)
Q# in High-Z
Input High Voltage, All Inputs
V
IH
2.0
V
DD
+ 0.3
V
(Note1)
Input Low Voltage, All Inputs
V
IL
-0.3
0.8
V
(Note2)
Output High Voltage Level (Logic 1)
V
OH
2.4
-
V
I
OH
=-2mA
Output Low Voltage Level (Logic 0)
V
OL
-
0.4
V
I
OL
=2mA
相關(guān)PDF資料
PDF描述
K3S7V2000M-TC10 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC12 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC15 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC20 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC30 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K3S7V2000M-TC10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC15 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
K3S7V2000M-TC30 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
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