參數(shù)資料
型號(hào): JZ48F4L0BTZ
廠商: Intel Corp.
英文描述: StrataFlash Wireless Memory
中文描述: 無線的StrataFlash存儲(chǔ)器
文件頁數(shù): 25/106頁
文件大?。?/td> 1272K
代理商: JZ48F4L0BTZ
Intel StrataFlash Wireless Memory (L18)
Datasheet
Intel StrataFlash Wireless Memory (L18)
Order Number: 251902, Revision: 009
April 2005
25
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only.
5.2
Operating Conditions
Warning:
Operation beyond the “Operating Conditions” is not recommended and extended exposure beyond
the “Operating Conditions” may affect device reliability.
Parameter
Maximum Rating
Notes
Temperature under bias
–25 °C to +85 °C
Storage temperature
–65 °C to +125 °C
Voltage on any signal (except VCC, VPP)
–0.5 V to +2.5 V
1
VPP voltage
–0.2 V to +10 V
1,2,3
VCC voltage
–0.2 V to +2.5 V
1
VCCQ voltage
–0.2 V to +2.5 V
1
Output short circuit current
100 mA
4
Notes:
1.
Voltages shown are specified with respect to V
. Minimum DC voltage is –0.5 V on input/output
signals and –0.2 V on V
, V
, and V
. During transitions, this level may undershoot to –2.0 V for
periods < 20 ns. Maximum DC voltage on V
is V
+0.5 V, which, during transitions, may overshoot
to V
+2.0 V for periods < 20 ns. Maximum DC voltage on input/output signals and V
CCQ
is V
CCQ
+0.5 V, which, during transitions, may overshoot to V
+2.0 V for periods < 20 ns.
Maximum DC voltage on V
may overshoot to +14.0 V for periods < 20 ns.
Program/erase voltage is typically 1.7 V – 2.0 V. 9.0 V can be applied for 80 hours maximum total, to
any blocks for 1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling
capability.
Output shorted for no more than one second. No more than one output shorted at a time.
2.
3.
4.
Symbol
Parameter
Min
Max
Units
Notes
T
C
V
CC
Operating Temperature
VCC Supply Voltage
–25
1.7
1.7
1.35
0.9
8.5
-
100,000
-
-
+85
2.0
2.0
2.0
2.0
9.5
80
-
1000
2500
°C
1
V
V
CCQ
I/O Supply Voltage
1.8 V Range
1.8 V Extended Range
V
PPL
V
PPH
t
PPH
V
PP
Voltage Supply (Logic Level)
Factory word programming V
PP
Maximum VPP Hours
Main and Parameter Blocks
Main Blocks
Parameter Blocks
2
V
PP
= V
PPH
V
PP
=
V
CC
V
PP
= V
PPH
V
PP
= V
PPH
Hours
Block
Erase
Cycles
Cycles
Notes:
1.
2.
T
= Case temperature
In typical operation, the VPP program voltage is V
. VPP can be connected to 8.5 V – 9.5 V for 1000
cycles on main blocks and 2500 cycles on parameter blocks.
相關(guān)PDF資料
PDF描述
JZ48F4L0QBY StrataFlash Wireless Memory
JZ48F4L0QBZ StrataFlash Wireless Memory
JZ48F4L0QTY StrataFlash Wireless Memory
JZ48F4L0QTZ StrataFlash Wireless Memory
JZC-32F SUBMINIATURE INTERMEDIATE POWER RELAY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JZ48F4L0QBY 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
JZ48F4L0QBZ 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
JZ48F4L0QTY 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
JZ48F4L0QTZ 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
JZ500 功能描述:8 ~ 50pF Trimmer Capacitor 110V Top Adjustment Surface Mount 0.177" L x 0.126" W (4.50mm x 3.20mm) 制造商:knowles voltronics 系列:JZ 包裝:剪切帶(CT) 零件狀態(tài):有效 電容范圍:8 ~ 50pF 調(diào)節(jié)類型:頂部調(diào)節(jié) 電壓 - 額定:110V 大小/尺寸:0.177" 長(zhǎng) x 0.126" 寬(4.50mm x 3.20mm) 高度 - 安裝(最大值):0.057"(1.45mm) 安裝類型:表面貼裝 特性:通用 標(biāo)準(zhǔn)包裝:1