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參數(shù)資料
| 型號(hào)： | JTDB75 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz |
| 中文描述： | 75瓦，36伏特，脈沖航空電子設(shè)備960 - 1215兆赫 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 230K |
| 代理商： | JTDB75 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
JTDB 75
75 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDB 75 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 220 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 8.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Vcc = 36 Volts
PW = 10
μ
sec
DF = 40%
F = 1090 MHz
15
Watts
dB
%
Power Out
F = 960-1215 MHz
75
Watts
7.0
7.5
40
3:1
BVebo
BVces
h
FE
θ
jc
2
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ic = 30 mA
Ic = 25 mA, Vce = 5 V
55
10
Volts
Emitter to Base Breakdown
Ie = 30mA
3.5
Volts
0.8
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue A, July 1997
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