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參數(shù)資料
| 型號(hào)： | JDV4P08T |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 18.3 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | TESQ, 1-1M1A, 4 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | JDV4P08T |
JDV4P08T
2005-12-12
1
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV4P08T
VCO for UHF Band Radio
High Capacitance Ratio: C1V/C4V = 3.0 (typ.)
Low Series Resistance : rs = 0.35 (typ.)
The device incorporates two diodes which have no common pins, and is
suitable for high-density mounting.
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
17.3
18.3
19.3
Capacitance
C4V
VR = 4 V, f = 1 MHz
5.3
6.1
6.6
pF
Capacitance ratio
C1V/C4V
2.8
3.0
Series resistance
rs
VR = 1 V, f = 470 MHz
0.35
0.42
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
0.2±0.05
0.9±0.05
1.2±0.05
0.
8±
0.
05 1
2
3
1.2±
0.05
4
0.12±0.05
0.52±
0.
05
JEDEC
―
JEITA
―
TOSHIBA
1-1M1A
Weight: 0.0015 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
TV
1
2
3
4
TESQ
1. ANODE1
2. ANODE2
3. CATHODE2
4. CATHODE1
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