參數(shù)資料
型號: JDV2S41FS
元件分類: 變?nèi)荻O管
英文描述: UHF BAND, 15 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
封裝: FSC, 1-1L1A, 2PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 151K
代理商: JDV2S41FS
JDV2S41FS
2009-06-02
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
JDV2S41FS
VCO for V/UHF Band Radio
Low series resistance: rs = 0.2 (typ.)
High capacitance ratio: C2 V / C10 V = 2.5 (typ.)
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
15
V
Reverse current
IR
VR = 15 V
3
nA
Capacitance
C2 V
VR = 2 V, f = 1 MHz
14
16
pF
Capacitance
C10 V
VR = 10 V, f = 1 MHz
5.5
6.5
pF
Capacitance ratio
C2 V/C10 V
2.0
2.5
Series resistance
rs
VR = 5 V, f = 470 MHz
0.2
0.4
Ω
Marking
Equivalent Circuit (top view)
Unit: mm
fSC
JEDEC
JEITA
TOSHIBA
1-1L1A
Weight: 0.6 mg (typ.)
0
.8±
0.
05
0.2
1.
0
±
0.
0
5
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
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