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參數(shù)資料
| 型號(hào)： | JDP2S08SC |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | SC2, 1-1R1A, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | JDP2S08SC |
JDP2S08SC
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S08SC
UHF~VHF Band RF Switch Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 1.0 Ω (typ.)
Low capacitance: CT = 0.21 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
30
V
Reverse current
IR
VR = 30 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.89
0.95
V
Capacitance(Note2)
CT
VR = 1 V, f = 1 MHz
0.21
0.4
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
1.0
1.5
Ω
Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
0.62±
0.03
0.19±
0.02
0.3±
0.03
0.32±0.03
0.38
0.19±
0.02
0.27±0.02
0.025±0.015
0.025±
0.015
１：Cathode
２：Anode
１
２
JEDEC
―
JEITA
―
TOSHIBA
1-1R1A
Weight: 0.00017 g (typ.)
Unit:mm
Cathode
Part Mark
SC2
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