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參數(shù)資料
| 型號： | JANTXV2N6806 |
| 元件分類： | JFETs |
| 英文描述： | 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封裝： | HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 149K |
| 代理商： | JANTXV2N6806 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 0V, TC = 25°C
Continuous Drain Current
-6.5
ID @ VGS = 0V, TC = 100°C
Continuous Drain Current
-4.0
IDM
Pulsed Drain Current
-28
PD @ TC = 25°C
Max. Power Dissipation
7 5
W
Linear Derating Factor
0.60
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
66
mJ
IAR
Avalanche Current
-6.5
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5 (typical)
g
PD - 90548C
o C
A
01/22/01
www.irf.com
1
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF9230
-200V
0.80
-6.5A
For footnotes refer to the last page
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
TO-3
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6806
HEXFET
TRANSISTORS
JANTXV2N6806
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/562]
IRF9230
200V, P-CHANNEL
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