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參數(shù)資料
| 型號： | JANTXV2N6798 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應(yīng)管） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 123K |
| 代理商： | JANTXV2N6798 |
Case Outline and Dimensions — TO-205AF (Modified TO-39)
Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 5.5A, VGS = 10V, 25
≤
RG
≤
200
2
) * [BVDSS/(BVDSS-VDD)]
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject o change without notice.
10/96
JANTX2N6798, JANTXV2N6798 Device
ISD
≤
5.5A, di/dt
≤
120A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W = °C/W
W/K = W/°C
All dimensions are shown millimeters (inches)
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