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參數(shù)資料
| 型號： | JANTXV2N6770 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應(yīng)管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 122K |
| 代理商： | JANTXV2N6770 |
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
0.83
Test Conditions
RthJC
RthJA
Junction-to-Ambient
—
—
48
K/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
12
48
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.7
1600
14
V
ns
μ
C
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
500
—
Typ. Max. Units
—
—
0.78
—
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
5.5
—
—
—
—
—
—
—
—
0.40
0.50
4.0
—
25
250
VGS = 10V, ID = 7.75A
VGS = 10V, ID = 12A
VDS = VGS, ID = 250
μ
A
VDS > 15V, IDS = 7.75A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 12A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 250V, ID = 12A,
RG = 3.5
,
VGS = 10V
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
55
5.0
27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
120
19
70
35
190
170
130
—
see figure 10
Modified MOSFET
symbol showing the
internal inductances.
LS
Internal Source Inductance
—
13
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2700
600
240
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
JANTX2N6770, JANTXV2N6770 Device
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
nA
A
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