參數資料
型號： JANTXV1N645-1
元件分類： 二極管(射頻、小信號、開關、功率)
英文描述： 0.15 A, SILICON, SIGNAL DIODE, DO-35
封裝： SIMILAR TO DO-35, 2 PIN
文件頁數： 1/2頁
文件大小： 67K
代理商： JANTXV1N645-1
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: ANY.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/240
SILICON RECTIFIER
METALLURGICALLY BONDED
1N645-1
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25°C
150 mA @ 150°C
Derating: 2.0 mA/°C From 25°C to 150°C
6.0 mA/°C From 150°C to 175°C
TYPE
VRSM
V RWM
I FSM
V F
CAP @
TP = 1/120 s
@400mA
V R = 4V
TA = 25°C
V (pk)
A
V DC
pF
1N645-1
270225
5
0
.8 - 1.0
20
TYPE
I R1 at V RWM I R2 at V RWM I R3 at V RSM
TA = 25°C
TA = 150°C
TA = 25°C
A
1N645-1
0.05
25
50
相關PDF資料
PDF描述
JANTXV1N649-1 0.15 A, SILICON, SIGNAL DIODE, DO-35
JAN1N649-1 0.15 A, SILICON, SIGNAL DIODE
JANTXV1N649-1 0.15 A, SILICON, SIGNAL DIODE
JANTXV1N6636US 4.7 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
JANTXV1N6633US 3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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參數描述
JANTXV1N645UR-1 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 225V 0.4A 2PIN DO-213AA - Trays
JANTXV1N6461 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN E - Bulk 制造商:Microsemi Corporation 功能描述:TVS DIODE 5VWM 9VC BPKG AXIAL 制造商:Microsemi Corporation 功能描述:TVS 500W B-PKG AXIAL
JANTXV1N6461US 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN MELF - Trays
JANTXV1N6462 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR (TVS) - Bulk
JANTXV1N6462US 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 6V 500W 2PIN MELF - Trays
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