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參數(shù)資料
| 型號： | JANTX2N6851U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET MOS場效應管) |
| 中文描述： | 的HEXFET晶體管（馬鞍山的HEXFET場效應管） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 134K |
| 代理商： | JANTX2N6851U |
IRFE9230, JANTX-, JANTXV-, JANS-, 2N6851U Device
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
200
400
600
800
1000
1200
1400
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
10us
100us
1ms
10ms
0.1
1
10
100
1.0
2.0
3.0
4.0
5.0
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
°
0
5
10
15
20
25
30
35
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-4.0 A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
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