參數(shù)資料
型號： JANTX2N6849
廠商： International Rectifier
英文描述： HEXFET POWER MOSFET(HEXFET 功率MOS場效應管)
中文描述： HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管）
文件頁數(shù)： 2/6頁
文件大小： 126K
代理商： JANTX2N6849
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
Test Conditions
RthJC
5.0
RthJA
Junction-to-Ambient
—
—
175
K/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
-6.5
-25
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-4.7
250
3.0
V
ns
μ
C
T
j
= 25°C, IS = -6.5A, VGS = 0V
Tj = 25°C, IF = -6.5A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
-100
—
Typ. Max. Units
—
—
-0.10
—
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
0.30
0.345
-4.0
—
-25
-250
VGS = -10V, ID = -4.1A
VGS = -10V, ID = -6.5A
VDS = VGS, ID = -250
μ
A
VDS > -15V, IDS = -4.1A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -6.5A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = -50V, ID = -6.5A,
RG = 7.5
,
VGS = -10V
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
5.0
-100
100
34.8
7.1
21
60
140
140
140
—
14.7
1.0
2.0
—
—
—
—
—
see figure 10
Modified MOSFET
symbol showing the
internal inductances.
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
800
350
125
—
—
—
VGS = 0V, VDS = -25V
f = 1.0 MHz
see figure 5
JANTX2N6849, JANTXV2N6849 Device
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
nA
A
相關PDF資料
PDF描述
JANTX2N6851U HEXFET Transistor(HEXFET MOS場效應管)
JANTXV2N6851U HEXFET Transistor(HEXFET MOS場效應管)
JANS2N6851U HEXFET Transistor(HEXFET MOS場效應管)
JANTX2N7221 HEXFET Transistor(HEXFET 晶體管)
JANTXV2N7221 HEXFET Transistor(HEXFET 晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
JANTX2N6849U 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 6.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 6.5A 18LLCC - Bulk 制造商:Microsemi Corporation 功能描述:P CHANNEL MOSFET - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET P-CH 100V 6.5A 18-LCC 制造商:International Rectifier 功能描述:HEXFET, HIREL,QPL,-100V, -6.5A, 0.30 OHM
JANTX2N685 制造商:Microsemi Corporation 功能描述:THYRISTOR SILICON PWR TO-208AA
JANTX2N6851 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 200V 4A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 4A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:Single P-Channel 200 V 25 W 34.8 nC Hexfet Transistors Through Hole - TO-39
JANTX2N6851U 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 200V 4A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 4A 18PIN LCC - Bulk
JANTX2N686 制造商:Microsemi Corporation 功能描述:SILICON POWER THYRISTOR - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*