
IRHE57133SE, JANSR2N7500U5
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
130
—
Typ
—
0.16
Max Units
— V VGS = 0V, ID = 1.0mA
—
V/°C
Reference to 25°C, ID = 1.0mA
Test Conditions
BVDSS
—
— 0.13
VGS = 12V, ID = 6.0A
2.5
5.0
—
—
—
—
—
—
4.5
—
10 A
25 VDS = 104V,
VGS = 0V, TJ = 125°C
100 nA
-100
48 VGS =12V, ID = 9.0A
16 nC VDS = 65V
18
25 VDD = 65V, ID = 9.0A,
100 ns
35
40
—
nH
Measured from the center of
drain pad to center of source pad
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 6.0A
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
VGS = -20V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1020
306
22
— VGS = 0V, VDS = 25V
— pF f = 1.0MHz
—
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
—
—
—
19
5.0
—
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
9.0
36
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
250
1.5
V
nS
μ
C
T
j
= 25°C, IS = 9.0A, VGS = 0V
Tj = 25°C, IF = 9.0A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Website.