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參數(shù)資料
| 型號(hào)： | JANSR2N7498T2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) |
| 中文描述： | 抗輻射功率MOSFET的通孔（到39） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | JANSR2N7498T2 |
IRHF57230SE, JANSR2N498T2
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
175
Units
Test Conditions
5.0
—
Typical socket mount
°C/W
Note: Corresponding Spice and Saber models are available on the Internationl Rectifier Website.
For footnotes refer to the last page
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.26
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.24
VGS = 12V, ID = 4.5A
2.5
4.2
—
—
—
—
—
—
4.5
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 4.5A
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 7.0A
VDS = 100V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
47
12
16
25
100
35
40
— nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
nC
VDD = 100V, ID = 7.0A
VGS =12V, RG = 7.5
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
1014
182
8.8
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
ns
μ
A
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
7.0
28
1.5
274
2.2
Test Conditions
—
—
—
—
—
V
ns
μ
C
T
j
= 25°C, IS = 7.0A, VGS = 0V
Tj = 25°C, IF = 7.0A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
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