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參數(shù)資料
| 型號： | JANSR2N7497T2 |
| 廠商： | International Rectifier |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 191K |
| 代理商： | JANSR2N7497T2 |
IRHF57133SE, JANSR2N7497T2
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
130
—
Typ Max Units
—
— V VGS = 0V, ID = 1.0mA
0.16 V/°C
Reference to 25°C, ID = 1.0mA
Test Conditions
BVDSS
—
—
0.1
VGS = 12V, ID = 6.5A
2.5
4.8
—
—
— 4.5 V
— — S (
)
—
10 A
—
25 VDS = 104V,
VGS = 0V, TJ = 125°C
—
100 nA
—
-100
—
48 VGS =12V, ID = 10.5A
—
16 nC VDS = 65V
—
18
—
25 VDD = 65V, ID = 10.5A,
—
100 ns
—
35
—
40
7.0
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25ini
from package) with Source wires internally
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 6.5A
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS = -20V
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
975
300
20
— VGS = 0V, VDS = 25V
— pF f = 1.0MHz
—
nH
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
5.0
175
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
10.5
42
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
250
1.4
V
nS
μ
C
T
j
= 25°C, IS = 10.5A, VGS = 0V
Tj = 25°C, IF = 10.5A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier website.
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