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參數(shù)資料
| 型號(hào)： | JANSR2N7492T2 |
| 廠商： | International Rectifier |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 146K |
| 代理商： | JANSR2N7492T2 |
IRHF57034, JANSR2N7492T2
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 3.74mH
Peak IL = 12A, VGS = 12V
ISD
≤
12A, di/dt
≤
244A/
μ
s,
VDD
≤
60V, TJ
≤
150°C
Case Outline and Dimensions — TO-205AF (Modified TO-39)
Footnotes:
!
" #
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.
Data and specifications subject to change without notice. 04/2006
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