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參數(shù)資料
| 型號： | JANSR2N7489T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對257AA） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 184K |
| 代理商： | JANSR2N7489T3 |
IRHY57230CMSE, JANSR2N7489T3
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.26
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.23
VGS = 12V, ID = 7.6A
2.5
6.0
—
—
—
—
—
—
4.5
—
10
25
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.6A
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 12A
VDS = 100V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
28
9.0
12
25
100
35
30
—
nC
VDD = 100V, ID = 12A,
VGS =12V, RG = 7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1000
184
11
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
—
—
—
—
1.67
80
°C/W
Measured from drain lead (6mm
0.25in. from package) to source
lead (6mm/0.25in. from package)
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
12
48
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
300
3.2
V
nS
μ
C
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
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