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參數(shù)資料
| 型號(hào)： | JANSR2N7485U3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 187K |
| 代理商： | JANSR2N7485U3 |
IRHNJ57133SE, JANSR2N7485U3
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
104 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 0.3 mH
Peak IL = 20A, VGS = 12V
ISD
≤
20A, di/dt
≤
365A/
μ
s,
VDD
≤
130V, TJ
≤
150°C
Footnotes:
Case Outline and Dimensions — SMD-0.5
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 05/2004
1 = DRAIN
2 = GATE
3 = SOURCE
PAD ASSIGNMENTS
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