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參數(shù)資料
| 型號： | JANSR2N7475T1 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 207K |
| 代理商： | JANSR2N7475T1 |
www.irf.com
7
Pre-Irradiation
IRHMS57163SE, JANSR2N7475T1
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 12a.
Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
EA
ID
TOP 20A
28.5A
BOTTOM 45A
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|---|---|
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