參數(shù)資料
型號: JANSR2N7474U2
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
中文描述: 抗輻射功率MOSFET表面貼裝系統(tǒng)(SMD - 2)
文件頁數(shù): 3/8頁
文件大?。?/td> 190K
代理商: JANSR2N7474U2
www.irf.com
3
Radiation Characteristics
IRHNA57264SE, JANSR2N7474U2
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Parameter
100K Rads (Si)
Min
250
2.0
Units
Test Conditions
Max
4.5
100
-100
10
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 200V, V
GS
=0V
nA
μA
0.061
V
GS
= 12V, I
D
= 31A
R
DS(on)
V
SD
Diode Forward Voltage
1.2
V
V
GS
= 0V, I
D
= 45A
— 0.060
V
GS
= 12V, I
D
= 31A
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
Br
36.7
309 39.5 250 250 250 250 250
I
59.8
341 32.5 250 250 250 250 240
Au
82.3
350 28.4 250 250 225
LET
Energy Range
V
DS
(V)
175
50
0
50
100
150
200
250
300
0
-5
-10
-15
-20
VGS
V
Br
I
Au
相關(guān)PDF資料
PDF描述
JANSR2N7475T1 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7480U3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSF2N7480U3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSG2N7480U3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
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參數(shù)描述
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JANSR2N7475T1/DATAPACK 制造商:International Rectifier 功能描述:SPACE PART DATA - Virtual or Non-Physical Inventory (Software & Literature)
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