參數(shù)資料
型號(hào): JANSR2N7473U2
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
中文描述: 抗輻射功率MOSFET的通孔系統(tǒng)(SMD - 2)
文件頁數(shù): 5/8頁
文件大小: 188K
代理商: JANSR2N7473U2
www.irf.com
5
IRHNA57260SE, JANSR2N7473U2
!
!
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""
#$
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.2
0.4
V ,Source-to-Drain Voltage (V)
0.6
0.8
1.0
1.2
1.4
I
S
V = 0 V
T = 25 C
°
T = 150 C
Pre-Irradiation
1.0
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
100μs
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
FOR TEST CIRCUIT
SEE FIGURE
I =
13
53.5A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
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