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參數(shù)資料
| 型號： | JANSR2N7472U2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 191K |
| 代理商： | JANSR2N7472U2 |
IRHNA57163SE, JANSR2N7472U2
Pre-Irradiation
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
—
—
—
1.6
0.5
—
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
75*
300
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
300
4.1
V
ns
μ
C
T
j
= 25°C, IS = 75A, VGS = 0V
Tj = 25°C, IF = 75A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
130
—
Typ
—
0.17
Max Units
— V VGS = 0V, ID = 1.0mA
—
V/°C
Reference to 25°C, ID = 1.0mA
Test Conditions
BVDSS
—
—
0.0135
VGS = 12V, ID = 57A
2.5
39
—
—
—
—
—
—
4.5
—
10 A
25 VDS = 104V,
VGS = 0V, TJ = 125°C
100 nA
-100
160 VGS =12V, ID = 75A
55 nC VDS = 65V
75
35 VDD = 65V, ID = 75A,
125 ns
80
50
—
nH
Measured from the center of
drain pad to the center of source
pad
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 57A
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
VGS = -20V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5020
1490
116
— VGS = 0V, VDS = 25V
— pF f = 1.0MHz
—
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