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參數(shù)資料
| 型號(hào)： | JANSR2N7470T1 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（低阻值到254AA） |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 182K |
| 代理商： | JANSR2N7470T1 |
IRHMS57064, JANSR2N7470T1
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
RD
VGS = 12V
ID = 45A
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
60
μ
s PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
4.0V
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
1
10
100
1000
ID
60
μ
s PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
12V
10V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
4.0V
4
4.5
5
5.5
6
6.5
7
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID
VDS = 25V
6
0μ
s PULSE WIDTH
TJ = 150°C
TJ = 25°C
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