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參數(shù)資料
| 型號： | JANSR2N7464T2 |
| 廠商： | International Rectifier |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | JANSR2N7464T2 |
www.irf.com
3
IRHF7430SE, JANSR2N7464T2
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Parameter
100K Rads (Si)
Min
500
2.0
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
50
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 400V, V
GS
=0V
nA
μA
—
1.77
V
GS
= 12V, I
D
= 1.6A
R
DS(on)
V
SD
Diode Forward Voltage
—
1.2
V
V
GS
= 0V, I
D
= 2.5A
— 1.77
V
GS
= 12V, I
D
= 1.6A
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Cu
28
285 43 375 375 375 375 375
Br
38
305 39 350 350 350 325 300
LET
Energy Range
V
DS
(V)
0
100
200
300
400
0
-5
-10
-15
-20
VGS
V
Cu
Br
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